摘要
This paper presents a low-power ultra-wideband RMS power detector fabricated in CMOS 55 nm process. The square-law characteristic of MOS transistor is exploited to convert RF power information into DC voltage. The circuit is composed of an RMS detection module and a closed-loop operational amplifier, which are utilized for power signal conversion and DC voltage amplification, respectively. The closed-loop two-stage operational amplifier features adjustable feedback and pull-up/pull-down resistors, allowing for flexible adjustment of power detection range. According to the measured results, the maximum dynamic range is 20 dB for 2-18 GHz RF input signals. With a supply voltage of 1.2 V, the power consumption is only 0.9 mW, and the differential output exhibits rail-to-rail range.
源语言 | 英语 |
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页(从-至) | 226-230 |
页数 | 5 |
期刊 | IEEE Information Technology and Mechatronics Engineering Conference, ITOEC |
期 | 2025 |
DOI | |
出版状态 | 已出版 - 2025 |
已对外发布 | 是 |
活动 | 8th IEEE Information Technology and Mechatronics Engineering Conference, ITOEC 2025 - Chongqing, 中国 期限: 14 3月 2025 → 16 3月 2025 |