Abstract
This paper presents a low-power ultra-wideband RMS power detector fabricated in CMOS 55 nm process. The square-law characteristic of MOS transistor is exploited to convert RF power information into DC voltage. The circuit is composed of an RMS detection module and a closed-loop operational amplifier, which are utilized for power signal conversion and DC voltage amplification, respectively. The closed-loop two-stage operational amplifier features adjustable feedback and pull-up/pull-down resistors, allowing for flexible adjustment of power detection range. According to the measured results, the maximum dynamic range is 20 dB for 2-18 GHz RF input signals. With a supply voltage of 1.2 V, the power consumption is only 0.9 mW, and the differential output exhibits rail-to-rail range.
| Original language | English |
|---|---|
| Pages (from-to) | 226-230 |
| Number of pages | 5 |
| Journal | IEEE Information Technology and Mechatronics Engineering Conference, ITOEC |
| Issue number | 2025 |
| DOIs | |
| Publication status | Published - 2025 |
| Externally published | Yes |
| Event | 8th IEEE Information Technology and Mechatronics Engineering Conference, ITOEC 2025 - Chongqing, China Duration: 14 Mar 2025 → 16 Mar 2025 |
Keywords
- CMOS
- RMS power detector
- low-power
- rail-to-rail output
- ultra-wideband