A SAW Pressure Sensor based on AlN thin film with a Novel Differential Structure: Balancing Sensitivity Enhancement and Temperature Decoupling

Aobei Chen, Dapeng Li, Ge Gao, Chun Hu, Dezhi Zheng*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Two SAW devices were integrated on a pressure-sensitive diaphragm based on an AlN film substrate. The placement of the devices was carefully designed according to the frequency variation behavior of the SAW devices and the strain distribution across the diaphragm, forming an effective differential structure. Experimental results demonstrated the beneficial effects of this design: the pressure sensitivity increased from 2.2267 ppm/kPa to 24.8767 ppm/kPa, while the temperature sensitivity decreased from 21.2572 ppm/°C to 3.8763 ppm/°C.

Original languageEnglish
Title of host publication9th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publicationShaping the Future with Innovations in Devices and Manufacturing, EDTM 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798331504168
DOIs
Publication statusPublished - 2025
Event9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 - Hong Kong, Hong Kong
Duration: 9 Mar 202512 Mar 2025

Publication series

Name9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025

Conference

Conference9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025
Country/TerritoryHong Kong
CityHong Kong
Period9/03/2512/03/25

Keywords

  • AlN thin film
  • SAW pressure sensor
  • Temperature decoupling

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