What You Need to Know for Growth of AlScN Thin Film via Atomic Layer Deposition?

Wurtzite materials are promising candidates to achieve breakthrough high levels of Ferroelectric memory. In this work, we explore the potential of AlScN thin films deposited via atomic layer deposition (ALD). ALD is particularly attractive due to its near-perfect control over material properties and scalability, making it highly suitable for mass production of memory devices. Initial efforts have been focused on achieving high uniformity in AlN thin films and devices. Next, we attempted to achieve AlScN, but it has been lots of failures. To make sure the Sc precursor has been pulsed into chamber, ScOx thin film is successfully deposited, paving the way for controlled incorporation of Sc into the AlN thin film. Finally, we compared AlScN with AlScOx thin films and found some potential challenges and opportunities by further investigation. This analysis may provide valuable steps to optimize the AlScN deposition process by ALD in the future, like the work before sunrise.