TY - JOUR
T1 - Substrate-free silicon nitride films for metamaterial absorbers designed with Lorentz quadratic model
AU - Li, Zhigang
AU - Jia, Jiarui
AU - Jiang, Wenjing
AU - Ou, Wen
AU - Wang, Bo
AU - Peng, Xubiao
AU - Wu, Hao
AU - Zhao, Qing
N1 - Publisher Copyright:
© 2023
PY - 2024/1
Y1 - 2024/1
N2 - 4-inch wafer-level substrate-free low-stress silicon nitride (SiNx) thin films are demonstrated in this paper for fabrication of terahertz (THz) metadevices. The chemical compositions, surface roughness, and THz properties of the SiNx film are investigated. Narrowband metamaterial absorbers designed with a Lorentz quadratic model are fabricated to evaluate the performance of the SiNx films. The new model reveals the quantitative relationship between the parameters of the model and the geometric parameters of the absorber. The performance of the absorber agrees well with the model which exhibits a full-width at half-maximum (FWHM) ≈ 0.11 THz and near-unity absorption (≈ 94%) at fc = 1.13 THz. Our results show that the wafer-level SiNx films will facilitate the development of large-scale, sophisticated-substrate-free THz metadevices. Moreover, the employed Lorentz model as well as its quadratic model can be a novel and practical method for the design of THz metadevices.
AB - 4-inch wafer-level substrate-free low-stress silicon nitride (SiNx) thin films are demonstrated in this paper for fabrication of terahertz (THz) metadevices. The chemical compositions, surface roughness, and THz properties of the SiNx film are investigated. Narrowband metamaterial absorbers designed with a Lorentz quadratic model are fabricated to evaluate the performance of the SiNx films. The new model reveals the quantitative relationship between the parameters of the model and the geometric parameters of the absorber. The performance of the absorber agrees well with the model which exhibits a full-width at half-maximum (FWHM) ≈ 0.11 THz and near-unity absorption (≈ 94%) at fc = 1.13 THz. Our results show that the wafer-level SiNx films will facilitate the development of large-scale, sophisticated-substrate-free THz metadevices. Moreover, the employed Lorentz model as well as its quadratic model can be a novel and practical method for the design of THz metadevices.
KW - Lorentz quadratic model
KW - Metamaterial absorbers
KW - Wafter-level substrate-free silicon nitride films
UR - http://www.scopus.com/pages/publications/85173542072
U2 - 10.1016/j.mssp.2023.107868
DO - 10.1016/j.mssp.2023.107868
M3 - Article
AN - SCOPUS:85173542072
SN - 1369-8001
VL - 169
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 107868
ER -