@inproceedings{c796b14972e949b6a9e183a609d64f28,
title = "Fabrication and research of wide-bandgap semiconductor AlN-based unipolar memristors",
abstract = "Wide-bandgap semiconductor aluminum nitride (AlN) has a wide range of applications. Here we designed memristors of Al (100 nm)/AlN (10 nm)/Al (100 nm) structure using plasma-enhanced atomic layer deposition (PEALD) and sputtering, which is compatible with CMOS technology and has the ROFF/RON ratio of 3600 times. The special electrode design allows to exhibit interesting unipolarity, enabling SET and RESET operations through only unidirectional voltage. This research reports a new structure of AlN-based memristors, which also inspires further enriching the applications of wide-bandgap semiconductor AlN.",
keywords = "AlN, memristors, Wide-bandgap",
author = "Haiming Qin and Xinpeng Wang and Dayu Zhou and Liang Zeng and Yi Liu and Yi Tong",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 ; Conference date: 09-03-2025 Through 12-03-2025",
year = "2025",
doi = "10.1109/EDTM61175.2025.11041557",
language = "English",
series = "9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "9th IEEE Electron Devices Technology and Manufacturing Conference",
address = "United States",
}