摘要
The stacking configuration significantly influences the properties of van der Waals (vdW) layered magnets by dictating crystallographic and magnetic symmetries. Transition-metal phosphorus trichalcogenides (MPX3, X = S, Se) intrinsically exhibit diverse stacking polytypes, being an optimal platform for magnetic phase engineering. Unlike MX2, where chalcogen doping has a minimal impact on stacking, MPX3 allows stacking control via elemental substitution. However, the atomic-scale mechanisms governing stacking variations remain unclear. Using scanning transmission electron microscopy (STEM) and density functional theory (DFT) calculations, we reveal that in 3d transition metal MPX3, tuning the S/Se ratio induces a transition from the C2/m to R3̅ phase due to modified interlayer S-S/Se-Se and P-P interactions. In contrast, stacking control becomes challenging for 4d CdPX3, due to relatively weak interlayer coupling. These insights provide a stacking basis for stacking polytypes in MPX3, paving the way for tuning magnetic couplings via stackingtronics.
源语言 | 英语 |
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页(从-至) | 6244-6252 |
页数 | 9 |
期刊 | Nano Letters |
卷 | 25 |
期 | 15 |
DOI | |
出版状态 | 已出版 - 16 4月 2025 |
已对外发布 | 是 |