每年的科研成果
每年的科研成果
个人简介
指纹图谱
深入其中 Yeliang Wang 为活跃的研究主题。这些主题标签来自此人的成果。它们共同形成唯一的指纹。
- 12 相似简介
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93.6 cm2 V-1·s-1 Homostructure a-IGZO Thin-Film Transistor with High-k Gate Dielectric Fabricated at Room Temperature
Gong, H. Y., Li, J. C., Xia, Y. H., Zhou, Y. D., Yang, H. X., Ma, Y. X. & Wang, Y. L., 2025, 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc., (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025).科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审
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Advanced Electromagnetic Compatibility Research for Semiconductor Manufacturing Equipment Based on a Multi-level Suppression Structure
Lv, X., Wang, Y. & Lv, G., 2025, The Proceedings of the 19th Annual Conference of China Electrotechnical Society. Yang, Q., Bie, Z. & Yang, X. (编辑). Springer Science and Business Media Deutschland GmbH, 页码 198-208 11 页码 (Lecture Notes in Electrical Engineering; 卷 1313).科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审
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A Novel Time-Division Multiplexing Architecture Revealed by Reconfigurable Synapse for Deep Neural Networks
Li, Y. T., Xu, K., Ma, Y. Z., Li, J. Z., Luo, Y., Li, X. R., Shen, P. H., Zhao, L. Y., Liu, H., Ren, L., Li, D. H., Peng, L. M., Ding, L., Ren, T. L. & Wang, Y., 2025, (已接受/待刊) 在: Advanced Materials.科研成果: 期刊稿件 › 文章 › 同行评审
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A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application
Wang, X., Chen, K., Li, Y., Qiao, J., Ma, Y., Jin, C., Wu, J., Chen, J., Kobayashi, M., Yang, G., Li, L., Mo, F. & Wang, Y., 2025, 在: IEEE Transactions on Electron Devices. 72, 5, 页码 2390-2398 9 页码科研成果: 期刊稿件 › 文章 › 同行评审
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A review on monolithic 3D integration: From bulk semiconductors to low-dimensional materials
Hu, Z., Li, H., Zhang, M., Jin, Z., Li, J., Fu, W., Dai, Y., Huang, Y., Liu, X. & Wang, Y., 3月 2025, 在: Nano Research. 18, 3, 94907225.科研成果: 期刊稿件 › 文献综述 › 同行评审
1 引用 （Scopus）