A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application

Xuebin Wang; Kaifei Chen; Yutao Li; Jingsi Qiao; Yuanxiao Ma; Chengji Jin; Jixuan Wu; Jiezhi Chen; Masaharu Kobayashi; Guanhua Yang; Ling Li; Fei Mo; Yeliang Wang

doi:10.1109/TED.2025.3549745

A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application

Xuebin Wang, Kaifei Chen, Yutao Li, Jingsi Qiao, Yuanxiao Ma, Chengji Jin, Jixuan Wu, Jiezhi Chen, Masaharu Kobayashi, Guanhua Yang, Ling Li, Fei Mo^*, Yeliang Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

InGaZnO (IGZO) transistors and their related memory applications have recently aroused great interest among researchers. In this article, we consider a shallow donor with a Gaussian distribution as positive charge in the IGZO channel to analyze surface potential (_φS) for subthreshold operation precisely. Meanwhile, a new surface potential analysis method for the IGZO channel is proposed considering 1) the effect of the floating body due to the lack of holes and 2) the effect of enhanced gate charge due to the electric field from the drain and source in the short channel. The proposed compact model demonstrates a good agreement with TCAD simulation and experimental results regarding device variation in all operation regions. Finally, a Monte Carlo simulation of IGZO ferroelectric field electric transistors (FeFET) and 2T0C IGZO FET DRAM, considering device and material properties variation shows the potential of this model for circuit-level simulations for memory applications.

Original language	English
Pages (from-to)	2390-2398
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	72
Issue number	5
DOIs	http://doi.org/10.1109/TED.2025.3549745
Publication status	Published - 2025
Externally published	Yes

Keywords

Compact model
InGaZnO (IGZO) channel
shallow donor
thin-film transistors (TFTs)

Access to Document

10.1109/TED.2025.3549745

Cite this

@article{348dae76cdfb4700a742df0543fb8c62,

title = "A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application",

abstract = "InGaZnO (IGZO) transistors and their related memory applications have recently aroused great interest among researchers. In this article, we consider a shallow donor with a Gaussian distribution as positive charge in the IGZO channel to analyze surface potential (φS) for subthreshold operation precisely. Meanwhile, a new surface potential analysis method for the IGZO channel is proposed considering 1) the effect of the floating body due to the lack of holes and 2) the effect of enhanced gate charge due to the electric field from the drain and source in the short channel. The proposed compact model demonstrates a good agreement with TCAD simulation and experimental results regarding device variation in all operation regions. Finally, a Monte Carlo simulation of IGZO ferroelectric field electric transistors (FeFET) and 2T0C IGZO FET DRAM, considering device and material properties variation shows the potential of this model for circuit-level simulations for memory applications.",

keywords = "Compact model, InGaZnO (IGZO) channel, shallow donor, thin-film transistors (TFTs)",

author = "Xuebin Wang and Kaifei Chen and Yutao Li and Jingsi Qiao and Yuanxiao Ma and Chengji Jin and Jixuan Wu and Jiezhi Chen and Masaharu Kobayashi and Guanhua Yang and Ling Li and Fei Mo and Yeliang Wang",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2025",

doi = "10.1109/TED.2025.3549745",

language = "English",

volume = "72",

pages = "2390--2398",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application

AU - Wang, Xuebin

AU - Chen, Kaifei

AU - Li, Yutao

AU - Qiao, Jingsi

AU - Ma, Yuanxiao

AU - Jin, Chengji

AU - Wu, Jixuan

AU - Chen, Jiezhi

AU - Kobayashi, Masaharu

AU - Yang, Guanhua

AU - Li, Ling

AU - Mo, Fei

AU - Wang, Yeliang

PY - 2025

Y1 - 2025

N2 - InGaZnO (IGZO) transistors and their related memory applications have recently aroused great interest among researchers. In this article, we consider a shallow donor with a Gaussian distribution as positive charge in the IGZO channel to analyze surface potential (φS) for subthreshold operation precisely. Meanwhile, a new surface potential analysis method for the IGZO channel is proposed considering 1) the effect of the floating body due to the lack of holes and 2) the effect of enhanced gate charge due to the electric field from the drain and source in the short channel. The proposed compact model demonstrates a good agreement with TCAD simulation and experimental results regarding device variation in all operation regions. Finally, a Monte Carlo simulation of IGZO ferroelectric field electric transistors (FeFET) and 2T0C IGZO FET DRAM, considering device and material properties variation shows the potential of this model for circuit-level simulations for memory applications.

AB - InGaZnO (IGZO) transistors and their related memory applications have recently aroused great interest among researchers. In this article, we consider a shallow donor with a Gaussian distribution as positive charge in the IGZO channel to analyze surface potential (φS) for subthreshold operation precisely. Meanwhile, a new surface potential analysis method for the IGZO channel is proposed considering 1) the effect of the floating body due to the lack of holes and 2) the effect of enhanced gate charge due to the electric field from the drain and source in the short channel. The proposed compact model demonstrates a good agreement with TCAD simulation and experimental results regarding device variation in all operation regions. Finally, a Monte Carlo simulation of IGZO ferroelectric field electric transistors (FeFET) and 2T0C IGZO FET DRAM, considering device and material properties variation shows the potential of this model for circuit-level simulations for memory applications.

KW - Compact model

KW - InGaZnO (IGZO) channel

KW - shallow donor

KW - thin-film transistors (TFTs)

UR - http://www.scopus.com/pages/publications/105000961263

U2 - 10.1109/TED.2025.3549745

DO - 10.1109/TED.2025.3549745

M3 - Article

AN - SCOPUS:105000961263

SN - 0018-9383

VL - 72

SP - 2390

EP - 2398

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this